ETCHANT DEPENDENCE OF SURFACE RECONSTRUCTIONS OF GAAS-SURFACES PREPARED BY ULTRASONIC-RUNNING DEIONIZED WATER-TREATMENT

被引：11

作者：

HIROTA, Y

HOMMA, Y

SUGII, K

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN

[2] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECTR LABS, TOKAI, IBARAKI 31911, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 26期

关键词：

D O I：

10.1063/1.105691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(001) GaAs surfaces treated with ultrasonic-running de-ionized water (U-RDIW) after NH4OH/H2O2/H2O etching are investigated by reflection high-energy electron diffraction (RHEED) and by x-ray photoelectron spectroscopy (XPS). RHEED observations show a spotty (1 X 1) pattern lying on the 0-th Laue circle at room temperature, a (2 X 4) streaky pattern at 310-degrees-C, and a spotty (3 X 6) pattern after annealing at 370-degrees-C. We discuss the difference in surface stoichiometry after U-RDIW between the H2SO4- and NH4OH-etched surfaces based on the results of XPS. The experimental results indicate the possibility of controlling the surface stoichiometry of the U-RDIW-treated GaAs surfaces by varying the etching solution.

引用

页码：3410 / 3412

页数：3

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