PHOTOLUMINESCENCE DECAY MEASUREMENTS OF N-TYPE AND P-TYPE DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY

被引：30

作者：

MASSA, JS

BULLER, GS

WALKER, AC

SIMPSON, J

PRIOR, KA

CAVENETT, BC

机构：

[1] Department of Physics, Heriot-Watt University, Riccarton, Edinburgh

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.111086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-resolved photoluminescence has been used to study carrier recombination in n- and p-type doped ZnSe at room temperature. A band-edge photoluminescence decay time of similar to 240 ps has been measured for heavily doped n-type material together with a relaxation time of a few microseconds for the associated deep-level emission. The band-edge photoluminescence decay time for p-type doped material was less than or equal to 11 ps and is indicative of a high level of nonradiative Shockley-Read recombination.

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页码：589 / 591

页数：3

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