OXIDATION OF SILICON - IS THERE A SLOW INTERFACE REACTION

被引：16

作者：

DOREMUS, RH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.343940

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4441 / 4443

页数：3

共 11 条

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