CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS SCHOTTKY BARRIERS - COMMENT

被引：7

作者：

POWELL, MJ ^{[1
]}

DOHLER, GH ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 01期

关键词：

D O I：

10.1063/1.328447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：517 / 518

页数：2

共 13 条

[1] CAPACITANCE STUDIES ON AMORPHOUS-SILICON SCHOTTKY-BARRIER DIODES [J].

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[2]

DOHLER GH, 1977, 7TH P INT C AM LIQ S, P372

[3] DETERMINATION OF THE DENSITY OF STATES OF A-SI-H USING THE FIELD-EFFECT [J].

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[4] ELECTRONIC DENSITY OF STATES IN DISCHARGE-PRODUCED AMORPHOUS SILICON [J].

HIROSE, M ;

SUZUKI, T ;

DOHLER, GH .

APPLIED PHYSICS LETTERS, 1979, 34 (03) :234-236

[5] INVESTIGATION OF DENSITY OF LOCALIZED STATES IN A-SI USING FIELD-EFFECT TECHNIQUE [J].

MADAN, A ;

LECOMBER, PG ;

SPEAR, WE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :239-257

[6]

MADAN A, 1977, 7TH P INT C AM LIQ S, P377

[7]

POWELL MJ, PHILOS MAG

[8] CAPACITANCE ENERGY LEVEL SPECTROSCOPY OF DEEP-LYING SEMICONDUCTOR IMPURITIES USING SCHOTTKY BARRIERS [J].

ROBERTS, GI ;

CROWELL, CR .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1767-+

[9] CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS SCHOTTKY BARRIERS [J].

SINGH, J ;

COHEN, MH .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :413-418

[10] METAL-AMORPHOUS SILICON BARRIER, INTERPRETATION OF CAPACITANCE AND CONDUCTANCE MEASUREMENTS [J].

SNELL, AJ ;

MACKENZIE, KD ;

LECOMBER, PG ;

SPEAR, WE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :593-598

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