NICKEL-RELATED DONOR LEVEL IN SILICON

被引：7

作者：

KITAGAWA, H ^{[1
]}

NAKASHIMA, H ^{[1
]}

机构：

[1] KYUSHU UNIV,DEPT ELECT ENGN,FUKUOKA 812,JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 102卷 / 01期

关键词：

D O I：

10.1002/pssa.2211020152

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：K23 / K27

页数：5

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