LOW-TEMPERATURE PLASMA ENHANCED CVD OF HIGHLY CONDUCTIVE SINGLE CRYSTALLINE AND POLYCRYSTALLINE SILICON MATERIALS

被引：8

作者：

NIJS, J

BAERT, K

SYMONS, J

KOBAYASHI, K

DESCHEPPER, P

机构：

来源：

APPLIED SURFACE SCIENCE | 1989年 / 36卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90896-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：23 / 38

页数：16

共 37 条

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