EFFECTS OF NITROGEN TRIFLUORIDE ON THE GROWTH AND PROPERTIES OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED DIAMOND-LIKE CARBON-FILMS

The effects of nitrogen trifluoride (NF3) on the growth and properties of plasma-enhanced chemical-vapor-deposited diamond-like carbon (DLC) films were investigated. The addition of NF3 increases the deposition rate of DLC film due presumably to the removal of activated hydrogen species by the fluorine radical (F-). Diamond-like carbon films deposited in a methane/NF3 mixture have a higher refractive index, a lower bulk resistivity, and a lower optical bandgap compared to films deposited in pure methane due to a lower hydrogen content in the films. Moreover, the bulk resistivity of methane/NF3 DLC films remains constant for annealing temperatures below 400-degrees-C. Thus, DLC films deposited with NF 3 are more stable than DLC films deposited without NF3.