LASER SELECTIVE AREA EPITAXY OF GAAS METAL-SEMICONDUCTOR-FIELD-EFFECT TRANSISTOR

We report for the first time the successful selective deposition and fabrication of a silicon-doped GaAs metal-semiconductor-field-effect transistor by laser-assisted chemical vapor deposition. No measurable growth or conductance outside the laser-irradiated area was observed, indicating complete selectivity was achieved. The Schottky gate contact showed an ideality factor of 1.15 and the reverse breakdown voltage is about 38 V at a leakage current density of 1-mu-A/(mu-m)2. The current saturation beyond pinch-off is fairly flat, indicating a good buffer layer and interfaces.