EFFECT OF ATOMIC-HYDROGEN ON GAAS(001) SURFACE OXIDE STUDIED BY TEMPERATURE-PROGRAMMED DESORPTION

被引：60

作者：

YAMADA, M

IDE, Y

TONE, K

机构：

[1] Optoelectronics Technology Research Laboratory (OTL), Tsukuba Ibaraki, 300-26

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 8B期

关键词：

X-RAY PHOTOELECTRON SPECTROSCOPY; TEMPERATURE-PROGRAMMED DESORPTION; GAAS; SURFACE OXIDE; ATOMIC HYDROGEN; DEOXIDATION; SURFACE CLEANING; GA2O3; GA2O;

D O I：

10.1143/JJAP.31.L1157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic hydrogen (H .)-induced modification of Ga2O3-like oxide on GaAs (001) was studied by temperature-programmed desorption. H . treatment at 300-degrees-C caused a new Ga2O desorption starting at around 400-degrees-C, whereas a sample treated with molecular hydrogen gave simultaneous desorption of Ga2O and elemental As only above 500-degrees-C, the same as observed in the untreated sample. X-ray photoelectron spectroscopy showed a reduction in O1s intensity after the H. treatment. These results indicate that atomic hydrogen converts Ga2O3-like oxide into volatile Ga2O-like oxide and consequently lowers the oxide-removal temperature.

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页码：L1157 / L1160

页数：4

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