NON-LINEAR CIRCUIT MODEL FOR IMPATT DIODES

被引：13

作者：

GANNETT, JW ^{[1
]}

CHUA, LO ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS | 1978年 / 25卷 / 05期

关键词：

D O I：

10.1109/TCS.1978.1084476

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：299 / 308

页数：10

共 21 条

[1] ELIMINATION OF TUNING-INDUCED BURNOUT AND BIAS-CIRCUIT OSCILLATIONS IN IMPATT OSCILLATORS [J].

BRACKETT, CA .

BELL SYSTEM TECHNICAL JOURNAL, 1973, 52 (03) :271-306

[2] EFFECT OF CARRIER DIFFUSION ON OPERATION OF AVALANCHE-DIODES [J].

CULSHAW, B .

ELECTRONICS LETTERS, 1974, 10 (09) :143-145

[3] IMPATT DIODE QUASI-STATIC LARGE-SIGNAL MODEL [J].

DECKER, DR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (08) :469-479

[4] COMPUTER-AIDED SMALL-SIGNAL CHARACTERIZATION OF IMPATT DIODES [J].

DUNN, CN ;

DALLEY, JE .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1969, MT17 (09) :691-+

[5]

GANNETT JW, 1977, M7759 ERL U CAL COLL

[6] NONLINEAR EQUIVALENT CIRCUIT FOR IMPATT DIODES [J].

GUPTA, MS .

SOLID-STATE ELECTRONICS, 1976, 19 (01) :23-26

[7]

HILIBRAND J, 1960, RCA REV, V21, P245

[8]

Hulin R., 1970, Electronics Letters, V6, P849, DOI 10.1049/el:19700585

[9] CARRIER DIFFUSION IN SEMICONDUCTOR AVALANCHES [J].

KUVAS, R ;

LEE, CA .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :3108-&

[10] NONLINEAR ANALYSIS OF MULTIFREQUENCY OPERATION OF READ DIODES [J].

KUVAS, R ;

LEE, CA .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1756-+

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