THE EFFECT OF ANNEALING ON RESIDUAL-STRESS AND DISLOCATION PROPAGATION IN SILICON SLICES WITH DAMAGED LAYER INDUCED BY SCRIBING

被引：9

作者：

KOTAKE, H

TAKASU, S

机构：

来源：

JOURNAL OF MATERIALS SCIENCE | 1981年 / 16卷 / 03期

关键词：

D O I：

10.1007/BF02402794

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：767 / 774

页数：8

共 10 条

[1]

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[2] ANNEALING OF SCRATCHES ON NEAR (111) SILICON SLICES [J].

BADRICK, AST ;

PUTTICK, KE ;

ELDEGHAIDY, FHA .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (06) :909-&

[3]

COTTRELL AH, 1953, DISLOCATIONS PLASTIC, P187

[4]

GEORGE A, 1972, PHYS STATUS SOLIDI B, V53, P483, DOI 10.1002/pssb.2220530209

[5] GENERATION OF SCRATCH-INDUCED DISLOCATIONS IN SILICON AND ITS ORIENTATION DEPENDENCE [J].

IIZUKA, T ;

OKADA, Y ;

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JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (03) :237-&

[6]

JENKINS MW, 1977, J ELECTROCHEM SOC, V124, P757, DOI 10.1149/1.2133401

[7] OBSERVATION OF RESIDUAL-STRESS AND DEFECTS IN SILICON INDUCED BY SCRIBING [J].

KOTAKE, H ;

TAKASU, SI .

JOURNAL OF MATERIALS SCIENCE, 1980, 15 (04) :895-902

[8] QUANTITATIVE MEASUREMENT OF STRESS IN SILICON BY PHOTOELASTICITY AND ITS APPLICATION [J].

KOTAKE, H ;

TAKASU, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :179-184

[9]

MIRSA A, 1979, J MATER SCI, V14, P2567

[10] DISLOCATION MOVEMENT AT ANNEALED SCRATCHES ON NEAR (111) SILICON [J].

PUTTICK, KE ;

SHAHID, MA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 54 (02) :K95-&

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