INCORPORATION OF BORON DURING THERMAL CHEMICAL VAPOR-DEPOSITION OF DOPED HYDROGENATED AMORPHOUS-SILICON

被引:4
作者
BRANZ, HM [1 ]
FLINT, JH [1 ]
HARRIS, CJ [1 ]
HAGGERTY, JS [1 ]
ADLER, D [1 ]
机构
[1] MIT,CAMBRIDGE,MA 02139
关键词
D O I
10.1063/1.98802
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:922 / 924
页数:3
相关论文
共 20 条
[1]  
ADLER D, 1984, SEMICONDUCT SEMIMET, V21, P291
[2]   STRUCTURE AND ELECTRONIC STATES IN DISORDERED-SYSTEMS [J].
BARYAM, Y ;
ADLER, D ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW LETTERS, 1986, 57 (04) :467-470
[3]  
BEYER W, 1984, SEMICONDUCT SEMIMET, V21, P257
[4]   CO2 LASER-ASSISTED DEPOSITION OF BORON AND PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON [J].
BILENCHI, R ;
GIANINONI, I ;
MUSCI, M ;
MURRI, R ;
TACCHETTI, S .
APPLIED PHYSICS LETTERS, 1985, 47 (03) :279-281
[5]   HYDROGENATED AMORPHOUS-SILICON GROWTH BY CO2-LASER PHOTO-DISSOCIATION OF SILANE [J].
BILENCHI, R ;
GIANINONI, I ;
MUSCI, M .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6479-6481
[6]   ABINITIO STUDY OF SILYLDIBORANE [J].
BOCK, CW ;
TRACHTMAN, M ;
MAKER, PD ;
NIKI, H ;
MAINS, GJ .
JOURNAL OF PHYSICAL CHEMISTRY, 1986, 90 (22) :5669-5671
[7]   DOPED HYDROGENATED AMORPHOUS-SILICON FILMS BY LASER-INDUCED CHEMICAL VAPOR-DEPOSITION [J].
BRANZ, HM ;
FAN, S ;
FLINT, JH ;
FISKE, BT ;
ADLER, D ;
HAGGERTY, JS .
APPLIED PHYSICS LETTERS, 1986, 48 (02) :171-173
[8]  
GIANINONI I, COMMUNICATION
[9]  
GREENWOOD NN, 1973, COMPREHENSIVE INORGA, V1, P770
[10]   DOPING EFFECTS ON POST-HYDROGENATED CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON [J].
MAGARINO, J ;
KAPLAN, D ;
FRIEDERICH, A ;
DENEUVILLE, A .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (03) :285-306