THE PHYSICS OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS

[11] DETERMINATION OF THE EXTENDED-STATE ELECTRON-MOBILITY IN A-SI [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (02): : L13 - L18

[12] SIOX/TAOX GATE INSULATOR A-SI TFT FOR LIQUID-CRYSTAL DISPLAYS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (09): : 1565 - 1567

[13] Inoue F., 1988, SID 88, P318

[14] IPRI AC, 1988, P SID, V29, P167

[15] ITO H, 1987, MATER RES SOC S P, V95, P437

[16] CREATION OF NEAR-INTERFACE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON SILICON-NITRIDE HETEROJUNCTIONS - THE ROLE OF HYDROGEN [J]. PHYSICAL REVIEW B, 1987, 36 (11): : 6217 - 6220

[17] KOHDA S, 1987, P INT DISPLAY RES C, P169

[18] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J]. ELECTRONICS LETTERS, 1979, 15 (06) : 179 - 181

[19] THE CHARACTERISTICS AND PROPERTIES OF OPTIMIZED AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (02): : 87 - 92

[20] ELECTRON-DRIFT MOBILITY IN AMORPHOUS SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (01): : 51 - 60

[11] DETERMINATION OF THE EXTENDED-STATE ELECTRON-MOBILITY IN A-SI [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (02): : L13 - L18

[12] SIOX/TAOX GATE INSULATOR A-SI TFT FOR LIQUID-CRYSTAL DISPLAYS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (09): : 1565 - 1567

[13] Inoue F., 1988, SID 88, P318

[14] IPRI AC, 1988, P SID, V29, P167

[15] ITO H, 1987, MATER RES SOC S P, V95, P437

[16] CREATION OF NEAR-INTERFACE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON SILICON-NITRIDE HETEROJUNCTIONS - THE ROLE OF HYDROGEN [J]. PHYSICAL REVIEW B, 1987, 36 (11): : 6217 - 6220

[17] KOHDA S, 1987, P INT DISPLAY RES C, P169

[18] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J]. ELECTRONICS LETTERS, 1979, 15 (06) : 179 - 181

[19] THE CHARACTERISTICS AND PROPERTIES OF OPTIMIZED AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 31 (02): : 87 - 92

[20] ELECTRON-DRIFT MOBILITY IN AMORPHOUS SI-H [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (01): : 51 - 60