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SWITCHING CHARACTERISTICS OF SCALED CMOS CIRCUITS AT 77-K
被引:19
作者
:
HUANG, JST
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC, DIV SOLID STATE ELECTR, PLYMOUTH, MN 55441 USA
HONEYWELL INC, DIV SOLID STATE ELECTR, PLYMOUTH, MN 55441 USA
HUANG, JST
[
1
]
SCHRANKLER, JW
论文数:
0
引用数:
0
h-index:
0
机构:
HONEYWELL INC, DIV SOLID STATE ELECTR, PLYMOUTH, MN 55441 USA
HONEYWELL INC, DIV SOLID STATE ELECTR, PLYMOUTH, MN 55441 USA
SCHRANKLER, JW
[
1
]
机构
:
[1]
HONEYWELL INC, DIV SOLID STATE ELECTR, PLYMOUTH, MN 55441 USA
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1987年
/ 34卷
/ 01期
关键词
:
D O I
:
10.1109/T-ED.1987.22891
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:101 / 106
页数:6
相关论文
共 9 条
[1]
VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON
COEN, RW
论文数:
0
引用数:
0
h-index:
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机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
COEN, RW
MULLER, RS
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0
引用数:
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h-index:
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机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
MULLER, RS
[J].
SOLID-STATE ELECTRONICS,
1980,
23
(01)
: 35
-
40
[2]
STACKED TRANSISTORS CMOS (ST-MOS), AN NMOS TECHNOLOGY MODIFIED TO CMOS
COLINGE, JP
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0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN, MICROELECTR LAB, B-1348 LOUVAIN LA NEUVE, BELGIUM
CATHOLIC UNIV LOUVAIN, MICROELECTR LAB, B-1348 LOUVAIN LA NEUVE, BELGIUM
COLINGE, JP
DEMOULIN, E
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0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN, MICROELECTR LAB, B-1348 LOUVAIN LA NEUVE, BELGIUM
CATHOLIC UNIV LOUVAIN, MICROELECTR LAB, B-1348 LOUVAIN LA NEUVE, BELGIUM
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CATHOLIC UNIV LOUVAIN, MICROELECTR LAB, B-1348 LOUVAIN LA NEUVE, BELGIUM
LOBET, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(04)
: 585
-
589
[3]
HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS
FANG, FF
论文数:
0
引用数:
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FANG, FF
FOWLER, AB
论文数:
0
引用数:
0
h-index:
0
FOWLER, AB
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(04)
: 1825
-
+
[4]
VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION
GAENSSLEN, FH
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引用数:
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h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
GAENSSLEN, FH
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
RIDEOUT, VL
WALKER, EJ
论文数:
0
引用数:
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h-index:
0
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IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
WALKER, EJ
WALKER, JJ
论文数:
0
引用数:
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0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
WALKER, JJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(03)
: 218
-
229
[5]
JU DH, 1985, DEC IEDM
[6]
UNIFIED FIELD-EFFECT TRANSISTOR-THEORY INCLUDING VELOCITY SATURATION
MURPHY, BT
论文数:
0
引用数:
0
h-index:
0
MURPHY, BT
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1980,
15
(03)
: 325
-
328
[7]
SCHRANKLER JW, 1984, DEC IEDM
[8]
N-CHANNEL ENHANCEMENT-MODE MOSFET CHARACTERISTICS FROM 10-K TO 300-K
TEWKSBURY, SK
论文数:
0
引用数:
0
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0
TEWKSBURY, SK
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(12)
: 1519
-
1529
[9]
HOT-ELECTRON-INDUCED MOSFET DEGRADATION AT LOW-TEMPERATURES
TZOU, JJ
论文数:
0
引用数:
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TZOU, JJ
YAO, CC
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0
引用数:
0
h-index:
0
YAO, CC
CHEUNG, R
论文数:
0
引用数:
0
h-index:
0
CHEUNG, R
CHAN, H
论文数:
0
引用数:
0
h-index:
0
CHAN, H
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(09)
: 450
-
452
←
1
→
共 9 条
[1]
VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON
COEN, RW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
COEN, RW
MULLER, RS
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720
MULLER, RS
[J].
SOLID-STATE ELECTRONICS,
1980,
23
(01)
: 35
-
40
[2]
STACKED TRANSISTORS CMOS (ST-MOS), AN NMOS TECHNOLOGY MODIFIED TO CMOS
COLINGE, JP
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN, MICROELECTR LAB, B-1348 LOUVAIN LA NEUVE, BELGIUM
CATHOLIC UNIV LOUVAIN, MICROELECTR LAB, B-1348 LOUVAIN LA NEUVE, BELGIUM
COLINGE, JP
DEMOULIN, E
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN, MICROELECTR LAB, B-1348 LOUVAIN LA NEUVE, BELGIUM
CATHOLIC UNIV LOUVAIN, MICROELECTR LAB, B-1348 LOUVAIN LA NEUVE, BELGIUM
DEMOULIN, E
LOBET, M
论文数:
0
引用数:
0
h-index:
0
机构:
CATHOLIC UNIV LOUVAIN, MICROELECTR LAB, B-1348 LOUVAIN LA NEUVE, BELGIUM
CATHOLIC UNIV LOUVAIN, MICROELECTR LAB, B-1348 LOUVAIN LA NEUVE, BELGIUM
LOBET, M
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(04)
: 585
-
589
[3]
HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS
FANG, FF
论文数:
0
引用数:
0
h-index:
0
FANG, FF
FOWLER, AB
论文数:
0
引用数:
0
h-index:
0
FOWLER, AB
[J].
JOURNAL OF APPLIED PHYSICS,
1970,
41
(04)
: 1825
-
+
[4]
VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
GAENSSLEN, FH
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
RIDEOUT, VL
WALKER, EJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
WALKER, EJ
WALKER, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,SEMICONDUCTOR DEVICE & PROC DESIGN GRP,YORKTOWN HTS,NY 10598
WALKER, JJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1977,
24
(03)
: 218
-
229
[5]
JU DH, 1985, DEC IEDM
[6]
UNIFIED FIELD-EFFECT TRANSISTOR-THEORY INCLUDING VELOCITY SATURATION
MURPHY, BT
论文数:
0
引用数:
0
h-index:
0
MURPHY, BT
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1980,
15
(03)
: 325
-
328
[7]
SCHRANKLER JW, 1984, DEC IEDM
[8]
N-CHANNEL ENHANCEMENT-MODE MOSFET CHARACTERISTICS FROM 10-K TO 300-K
TEWKSBURY, SK
论文数:
0
引用数:
0
h-index:
0
TEWKSBURY, SK
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(12)
: 1519
-
1529
[9]
HOT-ELECTRON-INDUCED MOSFET DEGRADATION AT LOW-TEMPERATURES
TZOU, JJ
论文数:
0
引用数:
0
h-index:
0
TZOU, JJ
YAO, CC
论文数:
0
引用数:
0
h-index:
0
YAO, CC
CHEUNG, R
论文数:
0
引用数:
0
h-index:
0
CHEUNG, R
CHAN, H
论文数:
0
引用数:
0
h-index:
0
CHAN, H
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(09)
: 450
-
452
←
1
→