CONNECTION BETWEEN SI-N AND SI-H VIBRATIONAL PROPERTIES IN AMORPHOUS SINX-H FILMS

被引：70

作者：

HASEGAWA, S

ANBUTSU, H

KURATA, Y

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1989年 / 59卷 / 03期

关键词：

D O I：

10.1080/13642818908220184

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：365 / 375

页数：11

共 16 条

[11] PROPERTIES OF HYDROGENATED AMORPHOUS SI-N PREPARED BY VARIOUS METHODS
MORIMOTO, A
TSUJIMURA, Y
KUMEDA, M
SHIMIZU, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (11): : 1394 - 1398
[12] PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SINX ALLOYS
SASAKI, G
KONDO, M
FUJITA, S
SASAKI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (10): : 1394 - 1399
[13] INFRARED-SPECTRUM AND STRUCTURE OF HYDROGENATED AMORPHOUS-SILICON
SHANKS, H
FANG, CJ
LEY, L
CARDONA, M
DEMOND, FJ
KALBITZER, S
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (01): : 43 - 56
[14] INFRARED-ABSORPTION BAND FOR SUBSTITUTIONAL NITROGEN IN SILICON
STEIN, HJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (12) : 1339 - 1341
[15] LOCAL ATOMIC-STRUCTURE IN THIN-FILMS OF SILICON-NITRIDE AND SILICON DIIMIDE PRODUCED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION
TSU, DV
LUCOVSKY, G
MANTINI, MJ
[J]. PHYSICAL REVIEW B, 1986, 33 (10): : 7069 - 7076
[16] FORMATION OF SILICON-NITRIDE COMPOUND LAYERS BY HIGH-DOSE NITROGEN IMPLANTATION
TSUJIDE, T
NOJIRI, M
KITAGAWA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1605 - 1610