HIGH-PURITY AND CHROME-DOPED GAAS BUFFER LAYERS GROWN BY LIQUID-PHASE EPITAXY FOR MESFET APPLICATION

被引：10

作者：

ABROKWAH, JK

HITCHELL, ML

BORELL, JE

SCHULZE, DR

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1981年 / 10卷 / 04期

关键词：

D O I：

10.1007/BF02660130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：723 / 746

页数：24

共 29 条

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