THE THERMAL-OXIDATION OF SILICON - THE SPECIAL CASE OF THE GROWTH OF VERY THIN-FILMS

[21] ATOMIC-STRUCTURE AT THE (111) SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4884 - 4887

[22] HEGGIE M, 1985, PHILOS MAG B, V51, P573, DOI 10.1080/13642818508243148

[23] SI(111) SURFACE OXIDATION - O-1S CORE-LEVEL STUDY USING SYNCHROTRON RADIATION [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 609 - 616

[24] MULTIPLE-BONDING CONFIGURATIONS FOR OXYGEN ON SILICON SURFACES [J]. PHYSICAL REVIEW B, 1983, 28 (06) : 3651 - 3653

[25] CHEMICAL AND ELECTRONIC-STRUCTURES OF THE SIO2-SI INTERFACE [J]. APPLIED SURFACE SCIENCE, 1981, 8 (03) : 318 - 336

[26] HOLLINGER G, 1979, THESIS U CB LYON 1

[27] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) : 1216 - 1222

[28] RESIDUAL-STRESS, CHEMICAL ETCH RATE, REFRACTIVE-INDEX, AND DENSITY-MEASUREMENTS ON SIO2-FILMS PREPARED USING HIGH-PRESSURE OXYGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 396 - 399

[29] THERMAL-OXIDATION OF SILICON IN VARIOUS OXYGEN PARTIAL PRESSURES DILUTED BY NITROGEN [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) : 2891 - 2896

[30] DEPENDENCE OF SI-SIO2 INTERFACE STATE DENSITY ON OXIDE THICKNESS IN STRUCTURES WITH ULTRATHIN (79-227-A) OXIDES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1203 - 1205

[21] ATOMIC-STRUCTURE AT THE (111) SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4884 - 4887

[22] HEGGIE M, 1985, PHILOS MAG B, V51, P573, DOI 10.1080/13642818508243148

[23] SI(111) SURFACE OXIDATION - O-1S CORE-LEVEL STUDY USING SYNCHROTRON RADIATION [J]. SURFACE SCIENCE, 1986, 168 (1-3) : 609 - 616

[24] MULTIPLE-BONDING CONFIGURATIONS FOR OXYGEN ON SILICON SURFACES [J]. PHYSICAL REVIEW B, 1983, 28 (06) : 3651 - 3653

[25] CHEMICAL AND ELECTRONIC-STRUCTURES OF THE SIO2-SI INTERFACE [J]. APPLIED SURFACE SCIENCE, 1981, 8 (03) : 318 - 336

[26] HOLLINGER G, 1979, THESIS U CB LYON 1

[27] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) : 1216 - 1222

[28] RESIDUAL-STRESS, CHEMICAL ETCH RATE, REFRACTIVE-INDEX, AND DENSITY-MEASUREMENTS ON SIO2-FILMS PREPARED USING HIGH-PRESSURE OXYGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) : 396 - 399

[29] THERMAL-OXIDATION OF SILICON IN VARIOUS OXYGEN PARTIAL PRESSURES DILUTED BY NITROGEN [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) : 2891 - 2896

[30] DEPENDENCE OF SI-SIO2 INTERFACE STATE DENSITY ON OXIDE THICKNESS IN STRUCTURES WITH ULTRATHIN (79-227-A) OXIDES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1203 - 1205