ADVANTAGES OF FLUORINE INTRODUCTION IN BORON IMPLANTED SHALLOW P+/N-JUNCTION FORMATION

被引：51

作者：

OHYU, K ^{[1
]}

ITOGA, T ^{[1
]}

NATSUAKI, N ^{[1
]}

机构：

[1] HITACHI LTD,CTR DEVICE DEV,OME,TOKYO 198,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 03期

关键词：

Activated boron concentration; Boron redistribution; Fluorine introduction; Leakage current; Shallow p[!sup]+[!/sup]/n-junction;

D O I：

10.1143/JJAP.29.457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The advantages of fluorine introduction on fabrication of shallow p+/n-junctions have been demonstrated. This was done by implanting fluorine onto the boron implanted p+/n-junction area prior to annealing. By introducing optimized amounts of fluorine, (1) the boron redistribution after annealing is suppressed, (2) the concentration of activated boron becomes higher, and (3) the leakage current level of the p+/n-junction decreases. These behaviors may be due to interactions between fluorine and defects in the silicon substrate or at the SiO2/Si interface. © 1990 The Japan Society of Applied Physics.

引用

页码：457 / 462

页数：6

共 13 条

[1] DEFECTS AND LEAKAGE CURRENTS IN BF2 IMPLANTED PREAMORPHIZED SILICON [J].