MEASUREMENTS OF THE CF, CF-2 AND CF-3 RADICALS IN A CHF3 ELECTRON-CYCLOTRON-RESONANCE PLASMA

被引：46

作者：

TAKAHASHI, K

HORI, M

MARUYAMA, K

KISHIMOTO, S

GOTO, T

机构：

[1] Department of Quantum Engineering, School of Engineering, Nagoya University, Chikusa-ku, Nagoya, 464-01, Furo-cho

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 5A期

关键词：

ELECTRON CYCLOTRON RESONANCE PLASMA; INFRARED DIODE LASER ABSORPTION SPECTROSCOPY; CHF3; CF; CF2; CF3; RADICAL DENSITY;

D O I：

10.1143/JJAP.32.L694

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The CF, CF2 and CF3 radicals were investigated in an on-off modulated electron cyclotron resonance (ECR) plasma employing a CHF3 gas using infrared diode laser absorption spectroscopy (IRLAS). The microwave power dependences of the radical densities were measured at a CHF3 pressure of 0.4 Pa in the microwave power range from 50 W to 800 W. Moreover, the extinction processes of the radicals were discussed on the basis of the decay curve analysis of the radical densities after termination of the discharge.

引用

页码：L694 / L697

页数：4

共 20 条

[1] SPATIALLY AND TEMPORALLY RESOLVED LASER-INDUCED FLUORESCENCE MEASUREMENTS OF CF2 AND CF RADICALS IN A CF4 RF PLASMA [J].

BOOTH, JP ;

HANCOCK, G ;

PERRY, ND ;

TOOGOOD, MJ .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (11) :5251-5257

[2] ION-SURFACE INTERACTIONS IN PLASMA ETCHING [J].

COBURN, JW ;

WINTERS, HF ;

CHUANG, TJ .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3532-3540

[3]

d'Agostino R., 1984, Plasma Chemistry and Plasma Processing, V4, P1, DOI 10.1007/BF00567367

[4]

ELLIOTT JM, 1983, J MOL SPECTROSC, V102, P193

[5] SELECTIVE ETCHING OF SILICON DIOXIDE USING REACTIVE ION ETCHING WITH CF4-H2 [J].

EPHRATH, LM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) :1419-1421

[6] CONTROL OF RELATIVE ETCH RATES OF SIO2 AND SI IN PLASMA ETCHING [J].

HEINECKE, RAH .

SOLID-STATE ELECTRONICS, 1975, 18 (12) :1146-1147

[7] SPATIAL-DISTRIBUTION OF SIH3 RADICALS IN RF SILANE PLASMA [J].

ITABASHI, N ;

NISHIWAKI, N ;

MAGANE, M ;

NAITO, S ;

GOTO, T ;

MATSUDA, A ;

YAMADA, C ;

HIROTA, E .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (03) :L505-L507

[8] MEASUREMENT OF THE SIH3 RADICAL DENSITY IN SILANE PLASMA USING INFRARED DIODE-LASER ABSORPTION-SPECTROSCOPY [J].

ITABASHI, N ;

KATO, K ;

NISHIWAKI, N ;

GOTO, T ;

YAMADA, C ;

HIROTA, E .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (08) :L1565-L1567

[9] INFRARED DIODE-LASER SPECTROSCOPY OF THE CF RADICAL [J].

KAWAGUCHI, K ;

YAMADA, C ;

HAMADA, Y ;

HIROTA, E .

JOURNAL OF MOLECULAR SPECTROSCOPY, 1981, 86 (01) :136-142

[10] A KINETIC-STUDY OF THE PLASMA-ETCHING PROCESS .1. A MODEL FOR THE ETCHING OF SI AND SIO2 IN CNFM/H2 AND CNFM/O2 PLASMAS [J].

KUSHNER, MJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :2923-2938

← 1 2 →