STRAINED INAS SINGLE QUANTUM-WELLS EMBEDDED IN A GA0.47IN0.53AS MATRIX

被引：19

作者：

TOURNIE, E

SCHONHERR, HP

PLOOG, K

GIANNINI, C

TAPFER, L

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

[2] CTR NAZL RIC & SVILUPPO MAT,I-72023 MESAGNE,ITALY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 07期

关键词：

D O I：

10.1063/1.107764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strained InAs single quantum wells (SQWs) embedded in a Ga0.47In0.53As matrix are grown on InP substrates by a modified solid-source molecular beam epitaxy. The series of samples with well between 2 and 11 monolayers (ML) is characterized by high-resolution double crystal x-ray diffraction and photoluminescence (PL) spectroscopy. The excellent agreement obtained between simulated and experimental x-ray rocking curves demonstrates the coherence of the samples. A PL linewidth as narrow as 7 meV is measured at 6 K for the SQW with a thickness of 5 ML. This is the best result reported so far for InAs QWs grown on InP. In addition, luminescence is observed up to room temperature for all samples.

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页码：846 / 848

页数：3

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