PRESSURE-ENHANCED SOLID-PHASE EPITAXY OF GERMANIUM

被引：42

作者：

LU, GQ ^{[1
]}

NYGREN, E ^{[1
]}

AZIZ, MJ ^{[1
]}

TURNBULL, D ^{[1
]}

WHITE, CW ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 02期

关键词：

D O I：

10.1063/1.103053

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the effect of pressure on the solid phase epitaxial growth rate of Ge(100) into self-implanted amorphous Ge by using in situ time-resolved infrared interferometry in a high-temperature, high-pressure diamond anvil cell. In the temperature range 300-365°C, a rate enhancement of more than a factor of 100 over that at ambient pressure has been observed due to hydrostatic pressures of up to 5.2 GPa (52 kbar). The pressure enhancement is characterized by a negative activation volume of -6.2±0.6 cm3/mol (-45% of the atomic volume), which is of the same sign but greater in magnitude than we found in Si. We conclude that the defects controlling the solid phase epitaxy of Ge cannot be vacancies in the crystal, that mechanisms based on other point defects migrating to the interface from either phase are unlikely, and that mechanisms based on point defects residing in the interface are plausible.

引用

页码：137 / 139

页数：3

共 31 条

[1] STRUCTURAL AND OPTICAL-PROPERTIES OF AMORPHOUS-GERMANIUM - AMORPHOUS-GERMANIUM .3. OPTICAL-PROPERTIES [J].