PREPARATION OF HIGH-QUALITY N-TYPE POLY-SI FILMS BY THE SOLID-PHASE CRYSTALLIZATION (SPC) METHOD

For further improvement of conversion efficiency in a-Si solar cells, it is necessary to develop materials with high photosensitivity in the long-wavelength region. A new solid phase crystallization (SPC) method was developed to grow a Si crystal at temperatures as low as 600-degrees-C. Using this method, high-quality thin-film polycrystalline silicon (poly-Si) with a Hall mobility of 70 cm2/V.s was obtained. Quantum efficiency in the range of 800 nm approximately 1000 nm was achieved up to 80% in an experimental solar cell using the n-type poly-Si with a grain size of about 1.5 mu-m. Therefore, it was found that our SPC method was suitable as a new technique to prepare high-quality solar cell materials.