A 45-NS 16-MBIT DRAM WITH TRIPLE-WELL STRUCTURE

被引：19

作者：

FUJII, S

OGIHARA, M

SHIMIZU, M

YOSHIDA, M

NUMATA, K

HARA, T

WATANABE, S

SAWADA, S

MIZUNO, T

KUMAGAI, J

YOSHIKAWA, S

KAKI, S

SAITO, Y

AOCHI, H

HAMAMOTO, T

TOITA, K

机构：

[1] TOSHIBA CO LTD,CTR RES & DEV,KAWASAKI 210,JAPAN

[2] TOSHIBA CO LTD,ULSI RES CTR,KAWASAKI 210,JAPAN

[3] TOSHIBA MICROELECTR CORP,KAWASAKI,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1989年 / 24卷 / 05期

关键词：

D O I：

10.1109/JSSC.1989.572574

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1170 / 1175

页数：6

共 11 条

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