FORMATION AND CHARACTERIZATION OF EPITAXIAL TIO2 AND BATIO3/TIO2 FILMS ON SI SUBSTRATE

被引：28

作者：

LEE, MB ^{[1
]}

KAWASAKI, M ^{[1
]}

YOSHIMOTO, M ^{[1
]}

MOON, BK ^{[1
]}

ISHIWARA, H ^{[1
]}

KOINUMA, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,PRECIS & INTELLIGENCE LAB,MIDORI KU,YOKOHAMA,KANAGAWA 226,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

LASER DEPOSITION; TIO2; RUTILE; OXIDATION; EPITAXY; 2-DOMAIN GROWTH; BUFFER LAYER; BATIO3; DIELECTRIC CONSTANT; LEAKAGE CURRENT;

D O I：

10.1143/JJAP.34.808

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rutile-phase TiO2 films were epitaxially grown on Si(100) substrates by oxidizing epitaxial TiN films grown by KrF pulsed excimer laser deposition. The TiO2 film was (110)-oriented and composed of two domains perpendicular to each other in the plane. The electrical resistivity at 2.5 V and the dielectric constant at 1 MHz of the film were 1.1 x 10(10) Omega . cm and 49, respectively. This film could be used as a buffer layer for the growth of epitaxial BaTiO3 film on Si. The BaTiO3 (260 nm)/TiO2 (230 nm) double-layered film showed a high dielectric constant (epsilon(r)=91) and a very low leakage current of 5 x 10(-8) A/cm(2) at 10 V.

引用

页码：808 / 811

页数：4

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