N-TYPE SIPOS AND POLYSILICON EMITTERS

被引：31

作者：

KWARK, YH

SWANSON, RM

机构：

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 11期

关键词：

D O I：

10.1016/0038-1101(87)90076-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1121 / 1125

页数：5

共 6 条

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HAMASAKI, M ;

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WAKAYAMA, S ;

KIKUCHI, M .

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[2]

KWARK YH, 1985, STANFORD ELECTRONICS

[3] A SIPOS-SI HETEROJUNCTION TRANSISTOR [J].

MATSUSHITA, T ;

HAYASHI, H ;

NORIKAZU, OU ;

YAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :75-81

[4] SILICON HETEROJUNCTION TRANSISTOR [J].

MATSUSHITA, T ;

OHUCHI, N ;

HAYASHI, H ;

YAMOTO, H .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :549-550

[5] HIGHLY RELIABLE HIGH-VOLTAGE TRANSISTORS BY USE OF SIPOS PROCESS [J].

MATSUSHITA, T ;

AOKI, T ;

OHTSU, T ;

YAMOTO, H ;

HAYASHI, H ;

OKAYAMA, M ;

KAWANA, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (08) :826-830

[6] ELECTRICAL-CONDUCTIVITY OF SEMI-INSULATING POLYCRYSTALLINE SILICON AND ITS DEPENDENCE UPON OXYGEN-CONTENT [J].

NI, J ;

ARNOLD, E .

APPLIED PHYSICS LETTERS, 1981, 39 (07) :554-556

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