ELECTROMIGRATION AND METALIZATION LIFETIMES

被引：66

作者：

SIGSBEE, RA ^{[1
]}

机构：

[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 06期

关键词：

D O I：

10.1063/1.1662609

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2533 / 2540

页数：8

共 31 条

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ATTARDO, MJ ;

INGRAHAM, AP .

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[2] REDUCTION OF ELECTROMIGRATION IN ALUMINUM FILMS BY COPPER DOPING [J].

AMES, I ;

DHEURLE, FM ;

HORSTMANN, RE .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (04) :461-+

[3] ELECTROMIGRATION DAMAGE IN ALUMINUM FILM CONDUCTORS [J].

ATTARDO, MJ ;

ROSENBERG, R .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (06) :2381-+

[4] STATISTICAL METALLURGICAL MODEL FOR ELECTROMIGRATION FAILURE IN ALUMINUM THIN-FILM CCNDUCTORS [J].

ATTARDO, MJ ;

RUTLEDGE, R ;

JACK, RC .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4343-&

[5] FORMATION AND MOTION ENERGIES OF VACANCIES IN ALUMINIUM [J].

BASS, J .

PHILOSOPHICAL MAGAZINE, 1967, 15 (136) :717-&

[6] SUPERIOR ALUMINUM FOR INTERCONNECTIONS OF INTEGRATED CIRCUITS [J].

BHATT, HJ .

APPLIED PHYSICS LETTERS, 1971, 19 (02) :30-&

[7]

BLACK J, 1968, 6 ANN REL PHYS S P

[8] ELECTROMIGRATION IN THIN AL FILMS [J].

BLECH, IA ;

MEIERAN, ES .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :485-&

[9] DIRECT TRANSMISSION ELECTRON MICROSCOPE OBSERVATION OF ELECTROTRANSPORT IN ALUMINUM THIN FILMS [J].

BLECH, IA ;

MEIERAN, ES .

APPLIED PHYSICS LETTERS, 1967, 11 (08) :263-&

[10]

BLECH IA, 1967, PHYSICS FAILURE ELEC, V5

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