CHEMICAL VAPOR-DEPOSITION IN SYSTEMS SILICON-CARBON AND SILICON-CARBON-NITROGEN

被引:18
作者
NICKL, JJ [1 ]
VONBRAUN.C [1 ]
机构
[1] UNIV MUNICH,INST ANORG CHEM,FORSCH LAB FESTKORPERCHEM,MUNICH,WEST GERMANY
来源
JOURNAL OF THE LESS-COMMON METALS | 1974年 / 37卷 / 03期
关键词
D O I
10.1016/0022-5088(74)90024-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:317 / 329
页数:13
相关论文
共 15 条
[1]   THERMODYNAMICAL ANALYSES AND EXPERIMENTS FOR PREPARATION OF SILICON NITRIDE [J].
ARIZUMI, T ;
NISHINAGA, T ;
OGAWA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (09) :1021-+
[2]   DIRECT NITRIDATION OF SILICON SUBSTRATES [J].
FRIESER, RG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (10) :1092-&
[3]   GROWTH MECHANISM OF POLYCRYSTALLINE BETA-SIC LAYERS ON SILICON SUBSTRATE [J].
GRAUL, J ;
WAGNER, E .
APPLIED PHYSICS LETTERS, 1972, 21 (02) :67-&
[4]  
Holmes PJ, 1959, P IEE B, V106, P861, DOI DOI 10.1049/PI-B-2.1959.0160
[5]  
KNIPPENBERG WF, 1963, THESIS U LEIDEN
[6]   EPITAXIAL GROWTH OF SIC FILM ON SILICON SUBSTRATE AND ITS CRYSTAL STRUCTURE [J].
NAKASHIMA, H ;
SUGANO, T ;
YANAI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (10) :874-+
[7]   GAS-PHASE DEPOSIT IN TI-SI-C SYSTEM [J].
NICKL, JJ ;
SCHWEITZER, KK ;
LUXENBERG, P .
JOURNAL OF THE LESS-COMMON METALS, 1972, 26 (03) :335-+
[8]   GAS PHASE DEPOSITING IN SILICON-CARBON SYSTEM [J].
NICKL, JJ ;
BRAUNMUH.CV .
JOURNAL OF THE LESS-COMMON METALS, 1971, 25 (03) :303-&
[9]   MORPHOLOGY OF GAS-PHASE DEPOSITED SYSTEM TITANIUM CARBIDE-GRAPHITE [J].
NICKL, JJ ;
VESPER, R .
JOURNAL OF THE LESS-COMMON METALS, 1971, 25 (03) :275-&
[10]   BETA-SILICON CARBIDE FILMS [J].
RAICHOUDHURY, P ;
FORMIGONI, NP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (10) :1440-+