PHOTOLUMINESCENCE LIFETIME OF GAP/AIP SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：7

作者：

ASAMI, K

ASAHI, H

KIM, SG

KIM, JH

ISHIDA, A

TAKAMUKU, S

GONDA, S

机构：

[1] Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 18期

关键词：

D O I：

10.1063/1.111590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence lifetimes of GaP/AlP short-period superlattices (GaP)11/(AlP)3 and (GaP)9/(AlP)5, grown on GaP(001) by gas-source molecular-beam epitaxy are studied by a time-correlated single photon counting method at 4.2 and 298 K. Two components of the photoluminescence lifetime are found for each sample. The fast component is about 2 ns accompanied by a slow component of about 20 ns. Discussion of the possible explanations of the two components includes the co-existence of direct- and indirect-band-gap transitions in the superlattice, which was fabricated from the indirect-band-gap constituents.

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页码：2430 / 2432

页数：3

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