GROWTH OF (111) ORIENTED MGO FILM ON SI SUBSTRATE BY THE SOL-GEL METHOD

Growth and structural evolution of a MgO thin film fabricated on Si substrate by using sol-gel method were investigated. Textured MgO films displaying (111)MgO∥(100)Si and (111)MgO∥(111)Si orientations were obtained. Crystallization of (111) oriented MgO film was observed to occur above 500°C regardless of the substrate orientations. X-ray diffraction results and surface morphology investigated by atomic force microscope show structural evolution of the film as annealing temperature is varied. Grain growth of larger size was observed for the films on Si(111). Formation of a Si-O-Mg layer caused by the reaction of the substrate surface with the metal alkoxide wet film during pyrolysis and crystallization is suggested to account for the (111) oriented MgO film on Si(100) and (111) substrates. © 1995 American Institute of Physics.