学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
EVALUATION OF ULTRATHIN NATIVE OXIDE ON GAAS SURFACE
被引:4
作者
:
SAKAI, I
论文数:
0
引用数:
0
h-index:
0
SAKAI, I
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
HIROSE, M
OSAKA, Y
论文数:
0
引用数:
0
h-index:
0
OSAKA, Y
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1980年
/ 127卷
/ 03期
关键词
:
D O I
:
10.1149/1.2129738
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:713 / 716
页数:4
相关论文
共 12 条
[1]
GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ADAMS, AC
PRUNIAUX, BR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PRUNIAUX, BR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(03)
: 408
-
414
[2]
ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697
[3]
GROVE AS, 1967, PHYS TECHNOL S, pCH2
[4]
GALLIUM OXIDE THIN-FILM BY REACTIVE VAPOR-DEPOSITION
HARIU, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,FAC ENGN,DEPT ELECT ENGN,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,FAC ENGN,DEPT ELECT ENGN,SENDAI,MIYAGI 980,JAPAN
HARIU, T
SASAKI, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,FAC ENGN,DEPT ELECT ENGN,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,FAC ENGN,DEPT ELECT ENGN,SENDAI,MIYAGI 980,JAPAN
SASAKI, S
ADACHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,FAC ENGN,DEPT ELECT ENGN,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,FAC ENGN,DEPT ELECT ENGN,SENDAI,MIYAGI 980,JAPAN
ADACHI, H
论文数:
引用数:
h-index:
机构:
SHIBATA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1977,
16
(05)
: 841
-
842
[5]
Hirose M., 1974, Oyo Buturi, V43, P798
[6]
DESIGN AND PERFORMANCE OF MICROWAVE AMPLIFIERS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
LIECHTI, CA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
LIECHTI, CA
TILLMAN, RL
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
TILLMAN, RL
[J].
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1974,
MT22
(05)
: 510
-
517
[7]
ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
LOGAN, RA
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
SCHWARTZ, B
SUNDBURG, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
SUNDBURG, WJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(10)
: 1385
-
1390
[8]
THERMAL OXIDATION OF GAAS
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MURARKA, SP
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(04)
: 180
-
181
[9]
GAAS-MOS CAPACITOR WITH NATIVE OXIDE FILM ANODIZED IN NON-AQUEOUS ELECTROLYTE
SHIMANO, A
论文数:
0
引用数:
0
h-index:
0
SHIMANO, A
MORITANI, A
论文数:
0
引用数:
0
h-index:
0
MORITANI, A
NAKAI, J
论文数:
0
引用数:
0
h-index:
0
NAKAI, J
[J].
SOLID-STATE ELECTRONICS,
1978,
21
(09)
: 1149
-
1152
[10]
AUGER CHARACTERIZATION OF CHEMICALLY ETCHED GAAS SURFACES
SHIOTA, I
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
SHIOTA, I
MOTOYA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
MOTOYA, K
OHMI, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
OHMI, T
MIYAMOTO, N
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
MIYAMOTO, N
NISHIZAWA, J
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
NISHIZAWA, J
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(01)
: 155
-
157
←
1
2
→
共 12 条
[1]
GALLIUM-ARSENIDE SURFACE FILM EVALUATION BY ELLIPSOMETRY AND ITS EFFECT ON SCHOTTKY BARRIERS
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ADAMS, AC
PRUNIAUX, BR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PRUNIAUX, BR
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(03)
: 408
-
414
[2]
ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697
[3]
GROVE AS, 1967, PHYS TECHNOL S, pCH2
[4]
GALLIUM OXIDE THIN-FILM BY REACTIVE VAPOR-DEPOSITION
HARIU, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,FAC ENGN,DEPT ELECT ENGN,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,FAC ENGN,DEPT ELECT ENGN,SENDAI,MIYAGI 980,JAPAN
HARIU, T
SASAKI, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,FAC ENGN,DEPT ELECT ENGN,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,FAC ENGN,DEPT ELECT ENGN,SENDAI,MIYAGI 980,JAPAN
SASAKI, S
ADACHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,FAC ENGN,DEPT ELECT ENGN,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,FAC ENGN,DEPT ELECT ENGN,SENDAI,MIYAGI 980,JAPAN
ADACHI, H
论文数:
引用数:
h-index:
机构:
SHIBATA, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1977,
16
(05)
: 841
-
842
[5]
Hirose M., 1974, Oyo Buturi, V43, P798
[6]
DESIGN AND PERFORMANCE OF MICROWAVE AMPLIFIERS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS
LIECHTI, CA
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
LIECHTI, CA
TILLMAN, RL
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
HEWLETT PACKARD CO,SOLID STATE LAB,PALO ALTO,CA 94304
TILLMAN, RL
[J].
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES,
1974,
MT22
(05)
: 510
-
517
[7]
ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
LOGAN, RA
SCHWARTZ, B
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
SCHWARTZ, B
SUNDBURG, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS,MURRAY HILL,NJ 07974
BELL TEL LABS,MURRAY HILL,NJ 07974
SUNDBURG, WJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1973,
120
(10)
: 1385
-
1390
[8]
THERMAL OXIDATION OF GAAS
MURARKA, SP
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
MURARKA, SP
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(04)
: 180
-
181
[9]
GAAS-MOS CAPACITOR WITH NATIVE OXIDE FILM ANODIZED IN NON-AQUEOUS ELECTROLYTE
SHIMANO, A
论文数:
0
引用数:
0
h-index:
0
SHIMANO, A
MORITANI, A
论文数:
0
引用数:
0
h-index:
0
MORITANI, A
NAKAI, J
论文数:
0
引用数:
0
h-index:
0
NAKAI, J
[J].
SOLID-STATE ELECTRONICS,
1978,
21
(09)
: 1149
-
1152
[10]
AUGER CHARACTERIZATION OF CHEMICALLY ETCHED GAAS SURFACES
SHIOTA, I
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
SHIOTA, I
MOTOYA, K
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
MOTOYA, K
OHMI, T
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
OHMI, T
MIYAMOTO, N
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
MIYAMOTO, N
NISHIZAWA, J
论文数:
0
引用数:
0
h-index:
0
机构:
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
NISHIZAWA, J
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1977,
124
(01)
: 155
-
157
←
1
2
→