INCREASED EFFECTIVE BARRIER HEIGHTS IN SCHOTTKY DIODES BY MOLECULAR-BEAM EPITAXY OF COSI2 AND GA-DOPED SI ON SI(111)

被引：4

作者：

FATHAUER, RW ^{[1
]}

LIN, TL ^{[1
]}

GRUNTHANER, PJ ^{[1
]}

ANDERSSON, PO ^{[1
]}

IANNELLI, JM ^{[1
]}

JAMIESON, DN ^{[1
]}

机构：

[1] CALTECH,JET PROP LAB,DIV APPL PHYS,PASADENA,CA 91109

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期

关键词：

D O I：

10.1063/1.341315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4082 / 4085

页数：4

共 15 条

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[2] LOW BARRIER HEIGHT SCHOTTKY MIXER DIODE USING SUPER THIN SILICON FILMS BY MOLECULAR-BEAM EPITAXY
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[4] TRANSMISSION ELECTRON-MICROSCOPY STUDY OF THE FORMATION OF EPITAXIAL COSI2/SI (111) BY A ROOM-TEMPERATURE CODEPOSITION TECHNIQUE
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[5] ENGINEERED SCHOTTKY-BARRIER DIODES FOR THE MODIFICATION AND CONTROL OF SCHOTTKY-BARRIER HEIGHTS
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5159 - 5169
[6] FATHAUER RW, UNPUB
[7] GRUNTHANER PJ, 1988, SILICON MOL BEAM EPI, V2, P375
[8] DIFFUSION OF GALLIUM IN SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5833 - 5837
[9] SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5608 - 5613
[10] ROOM-TEMPERATURE CODEPOSITION GROWTH TECHNIQUE FOR PINHOLE REDUCTION IN EPITAXIAL COSI2 ON SI (111)
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DANTERROCHES, C
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 804 - 806

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