SET OF 5 RELATED PHOTOLUMINESCENCE DEFECTS IN SILICON FORMED THROUGH NITROGEN-CARBON INTERACTIONS

被引：14

作者：

DORNEN, A

PENSL, G

SAUER, R

机构：

[1] UNIV ERLANGEN NURNBERG,INST ANGEW PHYS,D-8520 ERLANGEN,FED REP GER

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.35.9318

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9318 / 9321

页数：4

共 24 条

[1] ALT HC, 1985, J ELECTRON MATER A, V14, P833
[2] DEEP-LEVEL NITROGEN CENTERS IN LASER-ANNEALED ION-IMPLANTED SILICON
BROWER, KL
[J]. PHYSICAL REVIEW B, 1982, 26 (11): : 6040 - 6052
[3] JAHN-TELLER-DISTORTED NITROGEN DONOR IN LASER-ANNEALED SILICON
BROWER, KL
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (24) : 1627 - 1629
[4] CARBON IN RADIATION-DAMAGE CENTERS IN CZOCHRALSKI SILICON
DAVIES, G
LIGHTOWLERS, EC
WOOLLEY, R
NEWMAN, RC
OATES, AS
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (19): : L499 - L503
[5] NITROGEN-CARBON RADIATIVE DEFECT AT 0.746 EV IN SILICON
DORNEN, A
PENSL, G
SAUER, R
[J]. PHYSICAL REVIEW B, 1986, 33 (02): : 1495 - 1498
[6] VIBRATIONAL-MODE NITROGEN AND CARBON ISOTOPE SHIFTS ON THE N1(0.746 EV) PHOTOLUMINESCENCE SPECTRUM IN SILICON
DORNEN, A
PENSL, G
SAUER, R
[J]. SOLID STATE COMMUNICATIONS, 1986, 57 (11) : 861 - 864
[7] DORNEN A, 1985, J ELECTRON MATER A, V14, P653
[8] DORNEN A, 1986, OXYGEN CARBON HYDROG, V59, P545
[9] LUMINESCENCE OF CARBON AND OXYGEN RELATED COMPLEXES IN ANNEALED SILICON
MAGNEA, N
LAZRAK, A
PAUTRAT, JL
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 60 - 62
[10] THERMALLY-INDUCED DEFECTS IN SILICON CONTAINING OXYGEN AND CARBON
MINAEV, NS
MUDRYI, AV
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 68 (02): : 561 - 566