Doping of ZnSe, ZnTe, and CdTe with group V elements

被引：7

作者：

Wolf, H ^{[1
]}

Burchard, A ^{[1
]}

Deicher, M ^{[1
]}

Filz, T ^{[1
]}

Jost, A ^{[1
]}

Lauer, S ^{[1
]}

Magerle, R ^{[1
]}

Ostheimer, V ^{[1
]}

Pfeiffer, W ^{[1
]}

Wichert, T ^{[1
]}

机构：

[1] UNIV KONSTANZ,FAK PHYS,D-78434 CONSTANCE,GERMANY

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷

关键词：

II-VI compounds; In; N; P; As; Sb; donor-acceptor pairing; PAC;

D O I：

10.4028/www.scientific.net/MSF.196-201.309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interaction between group V accepters and the substitutional donor In in II-VI semiconductors is studied using perturbed yy angular correlation spectroscopy (PAC). In ZnSe, ZnTe, and CdTe, doped by implantation or diffusion with N, P, As, or Sb, close donor-acceptor pairs are detected. Basic properties of the accepters, such as lattice site, charge state, stability and diffusion mechanism are deduced from structure and stability of the formed pairs and from the temperature dependence of pair formation.

引用

页码：309 / 313

页数：5

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