THE EFFECT OF STEPS ON THE OXIDATION OF A CESIATED SI(100)2X1 SURFACE

被引:8
作者
KAMARATOS, M
KENNOU, S
LADAS, S
PAPAGEORGOPOULOS, CA
机构
关键词
D O I
10.1088/0953-8984/1/35/007
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:6071 / 6079
页数:9
相关论文
共 19 条
[1]   DESORPTION OF THE CATALYST AGENT AFTER CATALYTIC-OXIDATION OF SEMICONDUCTORS [J].
BAKSHI, MH ;
SOUKIASSIAN, P ;
GENTLE, TM ;
HURYCH, Z .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1425-1427
[2]   SIO2 ULTRA THIN-FILM GROWTH-KINETICS AS INVESTIGATED BY SURFACE TECHNIQUES [J].
DERRIEN, J ;
COMMANDRE, M .
SURFACE SCIENCE, 1982, 118 (1-2) :32-46
[3]   ELECTRONIC PROMOTERS AND SEMICONDUCTOR OXIDATION - ALKALI-METALS ON SI(111) SURFACES [J].
FRANCIOSI, A ;
SOUKIASSIAN, P ;
PHILIP, P ;
CHANG, S ;
WALL, A ;
RAISANEN, A ;
TROULLIER, N .
PHYSICAL REVIEW B, 1987, 35 (02) :910-913
[4]   PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION [J].
HOLLINGER, G ;
HIMPSEL, FJ .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :93-95
[5]   LEED STUDY OF THE STEPPED SURFACE OF VICINAL SI(100) [J].
KAPLAN, R .
SURFACE SCIENCE, 1980, 93 (01) :145-158
[6]   THE INFLUENCE OF STEPS ON THE EPITAXIAL-GROWTH OF IRON-SILICIDE ON SI(001) [J].
KENNOU, S ;
CHERIEF, N ;
CINTI, RC ;
TAN, TAN .
SURFACE SCIENCE, 1989, 211 (1-3) :685-691
[7]   THE INFLUENCE OF STEPS ON THE ADSORPTION OF CS ON SI(100) [J].
KENNOU, S ;
KAMARATOS, M ;
LADAS, S ;
PAPAGEORGOPOULOS, CA .
SURFACE SCIENCE, 1989, 216 (03) :462-471
[8]   THE INTERACTION OF CS AND O-2 ON THE BASAL-PLANE OF MOS2 [J].
KENNOU, S ;
LADAS, S ;
PAPAGEORGOPOULOS, C .
SURFACE SCIENCE, 1985, 164 (01) :290-304
[9]   ELECTRONIC AND STRUCTURAL-PROPERTIES OF STEPS ON CLEAVED SEMICONDUCTOR SURFACES [J].
KRUEGER, S ;
MONCH, W .
SURFACE SCIENCE, 1980, 99 (01) :157-164
[10]   MODELS FOR THE OXIDATION OF SILICON [J].
LEWIS, EA ;
IRENE, EA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1986, 4 (03) :916-925