EFFECTS OF HIGH UNIAXIAL STRESS ON FAR INFRA-RED IMPURITY SPECTRA OF HIGH-PURITY NORMAL-TYPE AND PARA-TYPE SILICON

被引:16
作者
COOKE, RA [1 ]
NICHOLAS, RJ [1 ]
STRADLING, RA [1 ]
PORTAL, JC [1 ]
ASKENAZY, S [1 ]
机构
[1] INST NATL SCI APPL LYON,DEPT PHYS,F-31077 TOULOUSE,FRANCE
关键词
D O I
10.1016/0038-1098(78)90997-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:11 / 15
页数:5
相关论文
共 14 条
[1]  
AGGARWAL RL, 1965, PHYS REV, V140, P1246
[2]   EXCITATION SPECTRUM OF BISMUTH DONORS IN SILICON [J].
BUTLER, NR ;
FISHER, P ;
RAMDAS, AK .
PHYSICAL REVIEW B, 1975, 12 (08) :3200-3209
[3]   QUANTITATIVE PIEZOSPECTROSCOPY OF GROUND AND EXCITED-STATES OF ACCEPTORS IN SILICON [J].
CHANDRAS.HR ;
FISHER, P ;
RAMDAS, AK ;
RODRIGUE.S .
PHYSICAL REVIEW B, 1973, 8 (08) :3836-3851
[4]   HIGHER DONOR EXCITED STATES FOR PROLATE-SPHEROID CONDUCTION BANDS - A REEVALUATION OF SILICON AND GERMANIUM [J].
FAULKNER, RA .
PHYSICAL REVIEW, 1969, 184 (03) :713-&
[5]   CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS [J].
HENSEL, JC ;
FEHER, G .
PHYSICAL REVIEW, 1963, 129 (03) :1041-&
[6]  
HENSEL JC, 1965, PHYS REV A, V138, P225
[7]   INTRINSIC PIEZOBIREFRINGENCE OF GE, SI, AND GAAS [J].
HIGGINBOTHAM, CW ;
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW, 1969, 184 (03) :821-+
[8]   EXCITATION-SPECTRA AND PIEZOSPECTROSCOPIC EFFECTS OF MAGNESIUM DONORS IN SILICON [J].
HO, LT ;
RAMDAS, AK .
PHYSICAL REVIEW B, 1972, 5 (02) :462-&
[9]  
HOULT RA, 1974, THESIS OXFORD
[10]   SPECTROSCOPIC INVESTIGATION OF GROUP-3 ACCEPTOR STATES IN SILICON [J].
ONTON, A ;
FISHER, P ;
RAMDAS, AK .
PHYSICAL REVIEW, 1967, 163 (03) :686-&