AN ALTERED LAYER MODEL FOR SPUTTER-PROFILING

被引：11

作者：

CARTER, G

KATARDJIEV, IV

NOBES, MJ

机构：

来源：

SURFACE AND INTERFACE ANALYSIS | 1989年 / 14卷 / 04期

关键词：

D O I：

10.1002/sia.740140406

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：194 / 208

页数：15

共 33 条

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CARTER, G ;

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NOBES, MJ .

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[7] THEORETICAL ASSESSMENTS OF MAJOR PHYSICAL PROCESSES INVOLVED IN THE DEPTH RESOLUTION IN SPUTTER PROFILING [J].

CARTER, G ;

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NOBES, MJ .

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[8] SPUTTERING INDUCED TOPOGRAPHY DEVELOPMENT ON FCC METALS [J].

CARTER, G ;

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[9]

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[10]

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