AN ALTERED LAYER MODEL FOR SPUTTER-PROFILING

被引：11

作者：

CARTER, G

KATARDJIEV, IV

NOBES, MJ

机构：

来源：

SURFACE AND INTERFACE ANALYSIS | 1989年 / 14卷 / 04期

关键词：

D O I：

10.1002/sia.740140406

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：194 / 208

页数：15

共 33 条

[11] PREFERENTIAL SPUTTERING OF BINARY-ALLOYS WITH DIFFUSION - EQUILIBRIUM DISTRIBUTION [J].

COLLINS, R .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2) :13-19

[12] ON THE COLLECTIVE CURRENT CONCEPT IN THE THEORY OF ATOMIC MIXING [J].

COLLINS, R .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 2 (1-3) :809-813

[13] THE DIFFUSION-APPROXIMATION IN ATOMIC MIXING [J].

COLLINS, R ;

MARSH, T ;

JIMENEZRODRIGUEZ, JJ .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :147-156

[14]

ERLEWEIN J, 1980, THIN SOLID FILMS, V69, pL39

[15] ION-BEAM-INDUCED ATOMIC MIXING [J].

HAFF, PK ;

SWITKOWSKI, ZE .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3383-3386

[16] THEORETICAL TREATMENT OF CASCADE MIXING IN DEPTH PROFILING BY SPUTTERING [J].

HOFER, WO ;

LITTMARK, U .

PHYSICS LETTERS A, 1979, 71 (5-6) :457-460

[17] EVALUATION OF CONCENTRATION-DEPTH PROFILES BY SPUTTERING IN SIMS AND AES [J].

HOFMANN, S .

APPLIED PHYSICS, 1976, 9 (01) :59-66

[18] DEPTH RESOLUTION IN SPUTTER PROFILING [J].

HOFMANN, S .

APPLIED PHYSICS, 1977, 13 (02) :205-207

[19]

KELLY R, 1986, P NATO ASI SERIES E, V112, P41

[20] A MODEL FOR ATOMIC MIXING AND PREFERENTIAL SPUTTERING EFFECTS IN SIMS DEPTH PROFILING [J].

KING, BV ;

TSONG, IST .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (04) :1443-1447

← 1 2 3 4 →