ON THE RELATIVE IMPORTANCE OF PHYSICAL AND CHEMICAL SPUTTERING DURING ION-ENHANCED ETCHING OF SILICON BY XEF2

被引：14

作者：

HOULE, FA

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 25期

关键词：

D O I：

10.1063/1.97713

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1838 / 1840

页数：3

共 21 条

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HARING, A .

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[5]

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[8] MASS AND ENERGY-DISTRIBUTION OF PARTICLES SPUTTER ETCHED FROM SI IN A XEF2 ENVIRONMENT [J].

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[9] A REINVESTIGATION OF THE ETCH PRODUCTS OF SILICON AND XEF - DOPING AND PRESSURE EFFECTS [J].

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[10]

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