THE N-CHANNEL SIGE/SI MODULATION-DOPED FIELD-EFFECT TRANSISTOR

被引：122

作者：

DAEMBKES, H

HERZOG, HJ

JORKE, H

KIBBEL, H

KASPAR, E

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 05期

关键词：

D O I：

10.1109/T-ED.1986.22544

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：633 / 638

页数：6

共 30 条

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