DOPANT REDISTRIBUTION AT SI SURFACES DURING VACUUM ANNEAL

被引：48

作者：

LIEHR, M

RENIER, M

WACHNIK, RA

SCILLA, GS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 09期

关键词：

D O I：

10.1063/1.338372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4619 / 4625

页数：7

共 22 条

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