REDUCTION OF SIDEGATING IN GAAS ANALOG AND DIGITAL CIRCUITS USING A NEW BUFFER LAYER

被引：22

作者：

CHEN, CL

SMITH, FW

CALAWA, AR

MAHONEY, LJ

MANFRA, MJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34211

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1546 / 1556

页数：11

相关论文

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