INFRARED-ABSORPTION STUDIES OF THE DIVACANCY IN SILICON - NEW PROPERTIES OF THE SINGLY NEGATIVE CHARGE STATE

被引：27

作者：

SVENSSON, JH

SVENSSON, BG

MONEMAR, B

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.38.4192

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4192 / 4197

页数：6

共 14 条

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[3]

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[4]

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[8]

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[9] DIVACANCY IN SILICON - HYPERFINE INTERACTIONS FROM ELECTRON-NUCLEAR DOUBLE-RESONANCE MEASUREMENTS .2. [J].

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[10] GENERATION OF DIVACANCIES IN SILICON IRRADIATED BY 2-MEV ELECTRONS - DEPTH AND DOSE DEPENDENCE [J].

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