CHARGE TRAPPING AND INTERFACE STATE GENERATION IN ULTRATHIN STACKED SI3N4/SIO2 GATE DIELECTRICS

被引：3

作者：

TING, W

AHN, J

KWONG, DL

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas at Austin, Austin

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 70卷 / 07期

关键词：

D O I：

10.1063/1.349202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Charge trapping and interface state generation in ultrathin (58-angstrom equivalent oxide thickness) stacked Si3N4/SiO2 (NO) films prepared by rapid thermal processing have been studied. Results show that the charge trapping characteristics of stacked films is comparable to those of pure SiO2, but interface state generation, especially under positive gate polarity stressing, is significantly enhanced. The high interface state generation rate under positive gate bias in stacked NO layers is explained by enhanced hole injection from the gate due to the low hole injection barrier at the polycrystalline-Si gate/nitride interface.

引用

页码：3934 / 3936

页数：3

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