CONTACT STRUCTURE FORMED IN THE NI/AL/SI SYSTEM DUE TO RAPID THERMAL MELTING

被引：5

作者：

KATZ, A

KOMEM, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 22期

关键词：

D O I：

10.1063/1.97316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1508 / 1510

页数：3

共 12 条

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[9] ELECTRICAL-PROPERTIES OF IMPLANTED AND RAPID THERMAL ANNEALED SHALLOW P+-N JUNCTIONS [J].

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[10]

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