APPLICATIONS OF SPECTROSCOPIC ELLIPSOMETRY TO MICROELECTRONICS

被引:129
作者
IRENE, EA
机构
[1] Department of Chemistry, University of North Carolina, Chapel Hill
基金
美国国家科学基金会;
关键词
D O I
10.1016/0040-6090(93)90069-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ellipsometry has been applied to problems in the microelectronics industry since the 1960s. Recently, spectroscopic ellipsometry has been introduced. In situ during-process ellipsometry offers great promise for monitoring and control of a wide variety of microelectronics processes. This review covers some applications in silicon technology such as oxidation, chemical vapor deposition, etching, interfaces, and new processing techniques such as plasma, ion beam and rapid thermal processing, in an effort to demonstrate the kinds of crucial microelectronics information and processes that modern ellipsometry can access. The conclusion is that single wavelength ellipsometry alone is not sufficient; spectroscopic ellipsometry is required to establish the optimum ellipsometry measurement conditions. The future of ellipsometry in microelectronics is assessed.
引用
收藏
页码:96 / 111
页数:16
相关论文
共 35 条
[1]   SPECTROSCOPIC ELLIPSOMETRY ON THE MILLISECOND TIME SCALE FOR REAL-TIME INVESTIGATIONS OF THIN-FILM AND SURFACE PHENOMENA [J].
AN, I ;
LI, YM ;
NGUYEN, HV ;
COLLINS, RW .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (08) :3842-3848
[3]   AN INVESTIGATION OF ION-BOMBARDED AND ANNEALED (111) SURFACES OF GE BY SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE ;
STUDNA, AA .
SURFACE SCIENCE, 1980, 96 (1-3) :294-306
[4]   HIGH PRECISION SCANNING ELLIPSOMETER [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED OPTICS, 1975, 14 (01) :220-228
[5]   OPTICAL-PROPERTIES OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE [J].
ASPNES, DE ;
THEETEN, JB .
PHYSICAL REVIEW LETTERS, 1979, 43 (14) :1046-1050
[6]  
ASPNES DE, 1979, PHYS REV B, V20, P3992
[7]  
BUCKNER JL, 1988, J APPL PHYS, V63, P5788
[8]   STRUCTURAL STUDIES OF HYDROGEN-BOMBARDED SILICON USING ELLIPSOMETRY AND TRANSMISSION ELECTRON-MICROSCOPY [J].
COLLINS, RW ;
YACOBI, BG ;
JONES, KM ;
TSUO, YS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (02) :153-158
[9]  
CONRAD KA, UNPUB J VAC SCI TE B
[10]   INVESTIGATION OF ION-IMPLANTED SEMICONDUCTORS BY ELLIPSOMETRY AND BACKSCATTERING SPECTROMETRY [J].
FRIED, M ;
LOHNER, T ;
JAROLI, E ;
VIZKELETHY, G ;
MEZEY, G ;
GYULAI, J ;
SOMOGYI, M ;
KERKOW, H .
THIN SOLID FILMS, 1984, 116 (1-3) :191-198