INTERPRETATION OF THE TEMPERATURE-DEPENDENCE OF THE LUMINESCENCE INTENSITY, LIFETIME, AND DECAY PROFILES IN POROUS SI

被引：56

作者：

SUEMOTO, T ^{[1
]}

TANAKA, K ^{[1
]}

NAKAJIMA, A ^{[1
]}

机构：

[1] FUJITSU LABS LTD, ATSUGI, KANAGAWA 24301, JAPAN

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.49.11005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature dependences of the luminescence intensity, lifetime, and decay profiles for porous Si are studied from 5 to 271 K. The radiative decay rates were determined from the tails of the decay curves and found to have an activation-type temperature dependence above 10 K. To describe the non-radiative process we propose a model in which we assume a tunneling and a thermally activated escape of the photoexcited carriers through barriers with a Gaussian distribution in height. The temperature dependence of intensity, lifetime, and nonexponential decay profiles are successfully interpreted in terms of this model.

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页码：11005 / 11009

页数：5

相关论文

共 15 条

[1] IDENTIFICATION OF RADIATIVE TRANSITIONS IN HIGHLY POROUS SILICON [J].

CALCOTT, PDJ ;

NASH, KJ ;

CANHAM, LT ;

KANE, MJ ;

BRUMHEAD, D .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (07) :L91-L98

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[3] EVIDENCE FOR QUANTUM CONFINEMENT IN THE PHOTOLUMINESCENCE OF POROUS SI AND SIGE [J].

GARDELIS, S ;

RIMMER, JS ;

DAWSON, P ;

HAMILTON, B ;

KUBIAK, RA ;

WHALL, TE ;

PARKER, EHC .

APPLIED PHYSICS LETTERS, 1991, 59 (17) :2118-2120

[4] TEMPERATURE-DEPENDENCE OF THE RADIATIVE LIFETIME IN POROUS SILICON [J].

HOOFT, GW ;

KESSENER, YARR ;

RIKKEN, GLJA ;

VENHUIZEN, AHJ .

APPLIED PHYSICS LETTERS, 1992, 61 (19) :2344-2346

[5] SUBPICOSECOND TIME-RESOLVED RAMAN-SPECTROSCOPY OF LO PHONONS IN GAAS [J].

KASH, JA ;

TSANG, JC ;

HVAM, JM .

PHYSICAL REVIEW LETTERS, 1985, 54 (19) :2151-2154

[6]

MADELUNG O, 1982, LANDOLTBORNSTEIN TAB, V17

[7] PICOSECOND LUMINESCENCE DECAY IN POROUS SILICON [J].

MATSUMOTO, T ;

DAIMON, M ;

FUTAGI, T ;

MIMURA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (5B) :L619-L621

[8] ULTRAFAST DECAY DYNAMICS OF LUMINESCENCE IN POROUS SILICON [J].

MATSUMOTO, T ;

FUTAGI, T ;

MIMURA, H ;

KANEMITSU, Y .

PHYSICAL REVIEW B, 1993, 47 (20) :13876-13879

[9] TIME-RESOLVED LUMINESCENCE SPECTRA OF POROUS SI [J].

MIYOSHI, T ;

LEE, KS ;

AOYAGI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (08) :2470-2471

[10] PHOTOLUMINESCENCE OF POROUS SI, OXIDIZED THEN DEOXIDIZED CHEMICALLY [J].

NAKAJIMA, A ;

ITAKURA, T ;

WATANABE, S ;

NAKAYAMA, N .

APPLIED PHYSICS LETTERS, 1992, 61 (01) :46-48