CHARACTERIZATION OF IMPLANTED AND ANNEALED VAPOR-PHASE EPITAXIAL GAAS

被引：15

作者：

BHATTACHARYA, PK ^{[1
]}

RHEE, JK ^{[1
]}

OWEN, SJT ^{[1
]}

YU, JG ^{[1
]}

SMITH, KK ^{[1
]}

KOYAMA, RY ^{[1
]}

机构：

[1] TEKTRONIX INC,BEAVERTON,OR 97077

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 12期

关键词：

D O I：

10.1063/1.328707

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：7224 / 7231

页数：8

相关论文

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