MOSSBAUER-SPECTROSCOPY STUDY OF THE THERMAL ANNEALING BEHAVIOR OF VERY LOW AND VERY HIGH-DOSE CO-IMPLANTED SI

被引：11

作者：

LANGOUCHE, G

DEPOTTER, M

DEZSI, I

WU, MF

VANTOMME, A

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90220-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：438 / 441

页数：4

共 17 条

[1] MOSSBAUER AND ANODIC-OXIDATION STUDY OF CO-IMPLANTED SI [J].

DEPOTTER, M ;

LANGOUCHE, G ;

DEBRUYN, J ;

VANROSSUM, M ;

COUSSEMENT, R ;

DEZSI, I .

HYPERFINE INTERACTIONS, 1981, 10 (1-4) :769-774

[2] COBALT-SILICIDE STRUCTURES STUDIED BY MOSSBAUER-SPECTROSCOPY [J].

DEZSI, I ;

ENGELMANN, H ;

GONSER, U ;

LANGOUCHE, G .

HYPERFINE INTERACTIONS, 1987, 33 (1-4) :161-171

[3]

DEZSI I, 1980, J PHYS-PARIS, V41, P425

[4] LATTICE LOCATION OF CO IMPLANTED IN SILICON [J].

KOTAI, E ;

LOHNER, T ;

MANUABA, A ;

MEZEY, G ;

COUSSEMENT, R ;

DEZSI, I ;

LANGOUCHE, G .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4) :153-155

[5] OBSERVATION OF A STRONG DOSE DEPENDENCE IN CO-57 IMPLANTATIONS IN SI AND GE [J].

LANGOUCHE, G ;

DEZSI, I ;

VANROSSUM, M ;

DEBRUYN, J ;

COUSSEMENT, R .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 93 (02) :K107-K110

[6] IDENTIFICATION OF SUBSTITUTIONAL AND INTERSTITIAL CO IMPLANTED IN SI [J].

LANGOUCHE, G ;

DEPOTTER, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :322-324

[7] OBSERVATION OF CO-DIMER FORMATION DURING THERMAL ANNEALING OF CO-IMPLANTED SI [J].

LANGOUCHE, G ;

DEPOTTER, M ;

SCHROYEN, D .

PHYSICAL REVIEW LETTERS, 1984, 53 (14) :1364-1367

[8]

LANGOUCHE G, 1982, RADIAT EFF LETT, V67, P404

[9]

LANGOUCHE G, 1989, IN PRESS MOSSBAUER S, V3

[10] IN-BEAM IMPLANTATION OF IRON INTO GERMANIUM, SILICON AND DIAMOND STUDIED BY THE MOSSBAUER-EFFECT [J].

LATSHAW, GL ;

RUSSELL, PB ;

HANNA, SS .

HYPERFINE INTERACTIONS, 1980, 8 (02) :105-127

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