IDENTIFICATION OF SUBSTITUTIONAL AND INTERSTITIAL CO IMPLANTED IN SI

被引：19

作者：

LANGOUCHE, G

DEPOTTER, M

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80065-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：322 / 324

页数：3

共 9 条

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[2]

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[7] IN-BEAM IMPLANTATION OF IRON INTO GERMANIUM, SILICON AND DIAMOND STUDIED BY THE MOSSBAUER-EFFECT [J].

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[8] ELECTRON-PARAMAGNETIC RESONANCE ON IRON-RELATED CENTERS IN SILICON [J].

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[9] TRANSITION-METALS IN SILICON [J].

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