HIGH-GAIN W-BAND PSEUDOMORPHIC INGAAS POWER HEMTS

We have fabricated 0.1-mu-m T-gate pseudomorphic (PM) InGaAs power HEMT's with record power and gain performance at 94 GHz. Devices with 40-mu-m gate periphery achieved 10.6-mW output power with 7.3-dB gain and 14.3% power-added efficiency (PAE). Devices with 160-mu-m gate periphery achieved 62.7-mW output power with 4.0-dB gain and 13.2% PAE. The superior performance of these devices at 94 GHz is due to the short 0.1-mu-m T-gate, optimized material and device structure, and source vias which reduce source inductance.